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Transys
Electronics
LIMITED
TO-251/252 Plastic-Encapsulated Transistors
6. 5 0 A. 10 0 2 . 30 A. 05 0 0. 5 1 A. 03 0
D882
FEATURES
TRANSISTOR (NPN)
14. 70
5 a
5 a
0. 80 A. 0 5 0 0. 6 0 A. 0 5 0
1.
Power dissipation PCM: 1.25 W (Tamb=25)
2. 3.
BASE
2. 3 0 A. 05 0
2. 3 0 A. 0 5 0
1 . 20
0. 51 A. 03 0
123
COLLECTOR
0 0. 75 A. 10
6. 50 A. 15 0 5. 30 A. 10 0 0. 51 A. 05 0 2. 30 A. 10 0
7. 70
0 5. 50 A. 10
TO-251 TO-252-2
5. 3 0 A. 05 0
5 a
Collector current ICM: 3A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE (sat) VBE (sat) fT
0 9. 70 A. 20
0. 51 A. 10 0 0 0 . 10 5 a
5 a
0 1. 60 A. 15
2. 30 A. 10 0
0. 60 A. 10 0 2. 30 A. 10 0 0. 51
123
unless otherwise specified)
Test conditions MIN 40 30 6 1 10 1 60 32 0.5 1.5 50 V V MHz 400 TYP MAX UNIT V V V A A A
Ic= 100A, IE=0 Ic= 10 mA, IB=0 IE= 100A, IC=0 VCB= 40V, IE=0 VCE= 30V, IB=0 VEB= 6V, IC=0 VCE= 2V, IC= 1A VCE= 2V, IC= 100mA IC= 2A, IB= 0.2 A IC= 2A, IB= 0.2 A VCE= 5V, Ic=0.1A f =10MHz
CLASSIFICATION OF hFE(1)
Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400
0 2. 70 A. 20
0 a a 9
0. 6
0. 80 A. 10 0
0 5. 50 A. 10
EMITTER
5 a
1. 20

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